AO6605 Complementary Enhancement Mode Field Effect
Transistor
General Description
The AO6605 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications.
Standard Product AO6605 is Pb-free (meets ROHS & Sony 259 specifications).
AO6605L is a Green Product ordering option.
AO6605 and AO6605L are electrically identical.
Features
n-channel p-channel -20V VDS (V) = 20V ID = 1.
9A (VGS = 4.
5V) -2.
5A RDS(ON) 200m Ω 97mΩ (VGS = 4.
5V) 270m Ω 130mΩ (VGS = 2.
5V) 400m Ω 190mΩ (VGS = 1.
8V)
D1 TSOP6 Top View G1 S2 G2 1 6 2 5 3 4 D1 S1 D2 G1 S1 G2
D2
...