STP40N20 STB40N20 - STW40N20 N-CHANNEL 200V - 0.
038Ω - 40A TO-220/TO-247/D2PAK LOW GATE CHARGE STripFET™ MOSFET Table 1: General Features TYPE com STP40N20 Figure 1: Package ID 40 A 40 A 40 A Pw 160 W 160 W 160 W 3 1 2 1 2 3 VDSS 200 V 200 V 200 V RDS(on) 0.
045 Ω 0.
045 Ω 0.
045 Ω STW40N20 STB40N20 ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.
038 Ω GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY EXCELLENT FIGURE OF MERIT (RDS*Qg) 100% AVALANCHE TESTED TO-220 TO-247 3 DESCRIPTION This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge.
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