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STP40N10FI

STMicroelectronics
Part Number STP40N10FI
Manufacturer STMicroelectronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
Published Dec 27, 2016
Detailed Description STP40N10 STP40N10FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP40N10 STP40N10FI VDSS 100 V 100 V R DS(...
Datasheet PDF File STP40N10FI PDF File

STP40N10FI
STP40N10FI

Overview
STP40N10 STP40N10FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP40N10 STP40N10FI VDSS 100 V 100 V R DS( on) < 0.
04 Ω < 0.
04 Ω ID 40 A 22 A s TYPICAL RDS(on) = 0.
035 Ω s AVALANCHE RUGGED TECHNOLOGY s 100% AVALANCHE TESTED s REPETITIVE AVALANCHE DATA AT 100oC s LOW GATE CHARGE s HIGH CURRENT CAPABILITY s 175oC OPERATING TEMPERATURE s APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s REGULATORS s DC-DC & DC-AC CONVERTERS s MOTOR CONTROL, AUDIO AMPLIFIERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.
) 3 2 1 TO-220 3 2 1 ISOWATT220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol P ar amete r VD S VDG R Drain-source Voltage (VGS = 0) Drain- gate Voltage (RGS = 20 kΩ) VGS ID ID ID M(•) Ptot Gate-source Voltage Drain Current (continuous) at T c = 25 oC Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 oC Der...


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