Part Number
|
HAT1065R |
Manufacturer
|
Renesas Technology |
Description
|
Silicon P-Channel Power MOSFET |
Published
|
Nov 20, 2008 |
Detailed Description
|
HAT1065R
Silicon P Channel Power MOS FET High Speed Power Switching
Features
• Low on-resistance • Capable of –4 V gate...
|
Datasheet
|
HAT1065R
|
Overview
HAT1065R
Silicon P Channel Power MOS FET High Speed Power Switching
Features
• Low on-resistance • Capable of –4 V gate drive • High density mounting
Outline
RENESAS Package code: PRSP0008DD-D (Package name: SOP-8FP-8DAV)
8 7 65
2
G
1 234
78 DD
4 G
S1 MOS1
56 DD
S3 MOS2
REJ03G0579-0200 Rev.
2.
00
Apr 04, 2006
1, 3
Source
2, 4
Gate
5, 6, 7, 8 Drain
Absolute Maximum Ratings
Item
Symbol
Ratings
Drain to source voltage
VDSS
–200
Gate to source voltage
VGSS
±15
Drain current Drain peak current
ID ID(pulse)Note1
–0.
25 –1
Body-drain diode reverse drain current Channel dissipation
IDR Pch Note2 Pch Note3
–0.
25 1.
3 2
Channel temperature
Tch
150
Storage temperature
Ts...
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