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HAT1065T

Renesas Technology
Part Number HAT1065T
Manufacturer Renesas Technology
Description Silicon P-Channel Power MOSFET
Published Sep 11, 2007
Detailed Description HAT1065T Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance • Capable of –4 V gate drive...
Datasheet PDF File HAT1065T PDF File

HAT1065T
HAT1065T

Overview
HAT1065T Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance • Capable of –4 V gate drive • High density mounting Outline RENESAS Package code: PTSP0008JB-B (Package name: TSSOP-8 ) 87 6 5 123 4 REJ03G0161-0200 Rev.
2.
00 Aug 06, 2007 1 8 D D 4 5 G G S3 MOS1 S6 MOS2 1, 8 Drain 3, 6 Source 4, 5 Gate 2, 7 NC Absolute Maximum Ratings Item Symbol Ratings Drain to source voltage VDSS –200 Gate to source voltage VGSS ±15 Drain current Drain peak current ID ID(pulse)Note1 –0.
25 –1 Body-drain diode reverse drain current Channel dissipation Channel dissipation IDR Pch Note2 Pch Note3 –0.
25 1 1.
5 Channel temperature Tch 150 Stora...


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