HAT1089C Silicon P Channel MOS FET Power Switching REJ03G1227-0300 Rev.
3.
00 Jun.
13, 2005 Features • Low on-resistance RDS(on) = 79 mΩ typ.
(at VGS = –4.
5 V) www.
DataSheet4U.
com • Low drive current.
• 2.
5 V gate drive devices.
• High density mounting Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6) Indexband 6 5 4 6 G 2 3 4 5 DDD D 1.
Source 2.
Drain 3.
Drain 4.
Drain 5.
Drain 6.
Gate 1 2 3 S 1 Absolute Maximum Ratings (Ta = 25°C) Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body - Drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
When using th...

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