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HAT1089C

Renesas Technology
Part Number HAT1089C
Manufacturer Renesas Technology
Description Silicon P-Channel Power MOSFET
Published Nov 20, 2008
Detailed Description HAT1089C Silicon P Channel MOS FET Power Switching REJ03G1227-0300 Rev.3.00 Jun. 13, 2005 Features • Low on-resistance ...
Datasheet PDF File HAT1089C PDF File

HAT1089C
HAT1089C

Overview
HAT1089C Silicon P Channel MOS FET Power Switching REJ03G1227-0300 Rev.
3.
00 Jun.
13, 2005 Features • Low on-resistance RDS(on) = 79 mΩ typ.
(at VGS = –4.
5 V) www.
DataSheet4U.
com • Low drive current.
• 2.
5 V gate drive devices.
• High density mounting Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6) Indexband 6 5 4 6 G 2 3 4 5 DDD D 1.
Source 2.
Drain 3.
Drain 4.
Drain 5.
Drain 6.
Gate 1 2 3 S 1 Absolute Maximum Ratings (Ta = 25°C) Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body - Drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
When using the glass epoxy board.
(FR4 40 × 40 × 1.
6mm), Ta = 25°C Symbol VDSS VGSS ID ID (pulse)Note1 IDR PchNote 2 Tch Tstg Ratings –20 ±12 –2 –8 –2 850 150 –55 to +150 Unit V V A A A mW °C °C Rev.
3.
00, Jun.
13, 2005, page 1 of 6 HAT1089C Electrical Characteristics (Ta = 25°C) Item Drain to Source breakdown voltage Gate to Source breakdown voltage Gate to Source leakage current Drain to Source leakage current Gate to Source cutoff voltage Drain to Source on state resistance Forward transfer admittance Input capacitance www.
DataSheet4U.
com Output capacitance Reverse transfer capacitance Total gate charge Gate to Source charge Gate to Drain charge Turn - on delay time Rise time Turn - off delay time Fall time Body - Drain diode forward voltage Notes: 3.
Pulse test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(th) RDS(on) | yfs | Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDF Min.
–20 ±12 — — –0.
4 — — 2 — — — — — — — — — — — Typ.
— — — — — 79 120 3.
5 365 105 70 4.
5 0.
6 1.
6 15 25 35 15 –0.
8 Max.
— — ±10 –1 –1.
4 103 168 — — — — — — — — — — — –1.
1 Unit V V µA µA V mΩ mΩ S pF pF pF nC nC nC ns ns ns ns V Test Conditions ID = –10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±10 V, VDS = 0 VDS = –20 V, VGS = 0 ID = –1 mA, VDS = –10 V Note3 ID = –1 A, VGS = –4.
5 V Note3 ID = –1 A, VGS = –2.
5 V Note3 ID = ...


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