HAT2116H Silicon N Channel Power MOS FET Power Switching Features • Capable of 4.
5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS (on) = 6.
3 mΩ typ.
(at VGS = 10 V) Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 4 G 1234 5 D S SS 1 23 REJ03G1189-0400 (Previous: ADE-208-1575B) Rev.
4.
00 Sep 07, 2005 1, 2, 3 4 5 Source Gate Drain Rev.
4.
00 Sep 07, 2005 page 1 of 6 HAT2116H Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Tc = 25 °C Electri...

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