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HAT2119H

Renesas Technology
Part Number HAT2119H
Manufacturer Renesas Technology
Description Silicon N-Channel MOSFET
Published Nov 20, 2008
Detailed Description HAT2119H Silicon N Channel MOS FET High Speed Power Switching Features • Low drive current. • Low on-resistance • Low p...
Datasheet PDF File HAT2119H PDF File

HAT2119H
HAT2119H

Overview
HAT2119H Silicon N Channel MOS FET High Speed Power Switching Features • Low drive current.
• Low on-resistance • Low profile Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK ) 5 4 G 1 234 5 D S SS 1 23 REJ03G0176-0300 Rev.
3.
00 Dec 19, 2006 1, 2, 3 4 5 Source Gate Drain Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at Tc = 25°C 3.
STch = 25°C, Tch ≤ 150°C Symbol VDSS VGSS ID ID(pulse) Note1 IDR IDR(pulse) Note1 IAP Note3 EAR Note3 Pch Note2 θch-c Tch Tstg Ratings 250 ±30 5 20 5 20 5 1.
5 20 6.
25 150 –55 to +150 (Ta = 25°C) Unit V V A A A A A mJ W °C/W °C °C Rev.
3.
00 Dec 19, 2006 page 1 of 3 HAT2119H Electrical Characteristics Item Symbol Min...


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