CMOS 4M (512K x 8) Pseudo-Static RAM
LH5PV8512 FEATURES • 524,288 words × 8 bit organization • CE access time (tCEA): 120 ns (MAX.) • Cycle time (tRC): 190 ns (MIN.) • Power supply: +3.0 V ± 0.15 V (Operating) +2.2 V to +3.15 V (Data retention) • Power consumption (MAX.): 126 mW (Operating) 95 µW (Standby = CMOS input level) 221 µW (Self-refresh = CMOS input level) • Available for address refre...
Sharp Electrionic Components