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LH5PV8512

Sharp Electrionic Components
Part Number LH5PV8512
Manufacturer Sharp Electrionic Components
Description CMOS 4M (512K x 8) Pseudo-Static RAM
Published Mar 22, 2005
Detailed Description LH5PV8512 FEATURES • 524,288 words × 8 bit organization • CE access time (tCEA): 120 ns (MAX.) • Cycle time (tRC): 190 n...
Datasheet PDF File LH5PV8512 PDF File

LH5PV8512
LH5PV8512

Overview
LH5PV8512 FEATURES • 524,288 words × 8 bit organization • CE access time (tCEA): 120 ns (MAX.
) • Cycle time (tRC): 190 ns (MIN.
) • Power supply: +3.
0 V ± 0.
15 V (Operating) +2.
2 V to +3.
15 V (Data retention) • Power consumption (MAX.
): 126 mW (Operating) 95 µW (Standby = CMOS input level) 221 µW (Self-refresh = CMOS input level) • Available for address refresh, auto-refresh, and self-refresh modes • 2,048 refresh cycles/32 ms • Address non-multiple • Not designed or rated as radiation hardened • Package: 32-pin, 525-mil SOP • Package material: Plastic • Substrate material: P-type silicon • Process: Silicon-gate CMOS • Operating temperature: 0 - 70°C CMOS 4M (512K × 8) Pseudo-Static RAM DESCRIPTION The LH5PV8512 is a 4M bit Pseudo-Static RAM with a 524,288 word × 8 bit organization.
It is fabricated using silicon-gate CMOS process technology.
A PSRAM uses on-chip refresh circuitry with a DRAM memory cell for pseudo-static operation which eliminates external clock inputs, while having t...


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