2STW4466
High power
NPN epitaxial planar bipolar
transistor
Features
■ High breakdown voltage VCEO = com ■ Complementary to 2STW1693 ■ ■
80 V
Typical ft = 20 MHz Fully characterized at 125 oC
Applications
■
3 2 1
Audio power amplifier TO-247
Description
The device is a
NPN transistor manufactured in low voltage planar technology using base island layout.
The resulting
transistor shows good gain linearity coupled with low VCE(sat) behaviour.
Recommended for 40 W to 70 W high fidelity audio frequency amplifier output stage.
Figure 1.
Internal schematic diagram
Table 1.
Device summary
Marking 2STW4466 Package TO-247 Packaging Tube
Order code
2STW4466
September 2008
Re...