DATA SHEET
SILICON
TRANSISTORS
2SC3622, 3622A
NPN SILICON EPITAXIAL
TRANSISTOR FOR LOW–FREQUENCY POWER AMPLIFIERS AND SWITCHING
FEATURES
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PACKAGE DRAWING (UNIT: mm)
• High hFE: hFE = 1000 to 3200 @VCE = 5.
0 V, IC = 1.
0 mA VCE(sat) = 0.
07 V TYP.
@IC/IB = 50 mA/5.
0 mA
• Low VCE(sat): • High VEBO: VEBO: 12 V (2SC3622) VEBO: 15 V (2SC3622A)
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) PT Tj Tstg 12 150 250 150 −55 to +150 Ratings 2SC3622 2SC3622A 60 50 15 Unit V V V mA mW °C ...