Part Number
|
HN7G08FE |
Manufacturer
|
Toshiba Semiconductor |
Description
|
General-Purpose Amplifier Applications |
Published
|
Feb 10, 2009 |
Detailed Description
|
HN7G08FE
TOSHIBA Multichip Discrete Device
www.DataSheet4U.com
HN7G08FE
Unit: mm
General-Purpose Amplifier Application...
|
Datasheet
|
HN7G08FE
|
Overview
HN7G08FE
TOSHIBA Multichip Discrete Device
www.
DataSheet4U.
com
HN7G08FE
Unit: mm
General-Purpose Amplifier Applications Switching and Muting Switch Applications
Q1
Low saturation voltage: VCE (sat) (1) = −15 mV (typ.
) @IC = −10 mA/IB = −0.
5 mA Large collector current: IC = −400 mA (max)
Q1: 2SA1955F Q2: RN1106F
Q1 Absolute Maximum Ratings (Ta = 25°C)
Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Symbol VCBO VCEO VEBO IC IB Rating −15 −12 −5 −400 −50 Unit V V V mA mA
(E1) 1.
EMITTER1 (B1) 2.
BASE1 3.
COLLECTOR2 (C2) (E2) 4.
EMITTER2 (B2) 5.
BASE2 6.
COLLECTOR1 (C1)
JEDEC JEITA TOSHIBA Weight: 0.
003 g (typ.
)
― ―
2-2J1...
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