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HN7G08FE

Toshiba Semiconductor
Part Number HN7G08FE
Manufacturer Toshiba Semiconductor
Description General-Purpose Amplifier Applications
Published Feb 10, 2009
Detailed Description HN7G08FE TOSHIBA Multichip Discrete Device www.DataSheet4U.com HN7G08FE Unit: mm General-Purpose Amplifier Application...
Datasheet PDF File HN7G08FE PDF File

HN7G08FE
HN7G08FE

Overview
HN7G08FE TOSHIBA Multichip Discrete Device www.
DataSheet4U.
com HN7G08FE Unit: mm General-Purpose Amplifier Applications Switching and Muting Switch Applications Q1 Low saturation voltage: VCE (sat) (1) = −15 mV (typ.
) @IC = −10 mA/IB = −0.
5 mA Large collector current: IC = −400 mA (max) Q1: 2SA1955F Q2: RN1106F Q1 Absolute Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Symbol VCBO VCEO VEBO IC IB Rating −15 −12 −5 −400 −50 Unit V V V mA mA (E1) 1.
EMITTER1 (B1) 2.
BASE1 3.
COLLECTOR2 (C2) (E2) 4.
EMITTER2 (B2) 5.
BASE2 6.
COLLECTOR1 (C1) JEDEC JEITA TOSHIBA Weight: 0.
003 g (typ.
) ― ― 2-2J1...


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