isc Silicon
PNP Power
Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -110V(Min.
) ·DC Current Gain-
: hFE=10-180@IC= -2.
5A ·Collector-Emitter Saturation Voltage-
: VCE(sat)= -1.
5V(Max)@ IC= -2.
5A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Power amplifier ·Low speed switching ·Power
regulator
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-110
V
VCEO
Collector-Emitter Voltage
-110
V
VEBO
Emitter-Base Voltage
-4
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation @TC=75℃
TJ
Junction Temperature
-5
A
50
W
150
℃
Tstg
Storage Tempe...