isc Silicon
NPN Power
Transistor
INCHANGE Semiconductor
3DD200
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min.
) ·DC Current Gain-
: hFE= 30~120(Min.
)@IC= 2A ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.
5V(Max)@ IC= 3A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for B&W TV horizontal output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
250
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
3
A
PC
Collector Power Dissipation@TC=75℃
30
W
TJ
Junction Temperature
150
...