isc Silicon
NPN Power
Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 150V(Min.
) ·DC Current Gain-
: hFE= 40~120(Min.
)@IC= 2A ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.
5V(Max)@ IC= 5A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for TV horizontal output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
350
V
VCEO
Collector-Emitter Voltage
150
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
8
A
PC
Collector Power Dissipation@TC=25℃
50
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~...