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2SC1590 Silicon
NPN Transistor RF Power Output
The 2SC1590 is a silicon
NPN epitaxial planer type
transistor designed for 136-174MHz RF power amplifiers on VHF band mobile radio applications.
WINTransceiver
BEC
Features:
High Power Gain: Gpe /= 10dB (VCC = 13.
5V, PO = 6W, f = 175MHz) Ability to Withstand more than 20:1 VSWR Load when Operated at: VCC = 15.
2V, PO = 6W, f = 175MHz
Application:
4 to 5 Watt Output Power Amplifier Applications in VHF Band Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)
Collector-Emitter Voltage (RBE = Infinity), VCEO Collector-Base Voltage, VCBO Emitter-Base Voltage, VEBO Collector Current, IC Collector Power Dissipat...