www.
DataSheet4U.
com High Voltage BIMOSFETTM Monolithic Bipolar MOS
Transistor
IXBH 15N140 IXBH 15N160
N-Channel, Enhancement Mode
C G
VCES IC25 VCE(sat) tfi
TO-247 AD
= = = =
1400/1600 V 15 A 5.
8 V typ.
40 ns
G C E E G = Gate, E = Emitter, C = Collector, TAB = Collector
C (TAB)
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg TL Md Weight
Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C, TC = 90°C TC = 25°C, 1 ms
Maximum Ratings 15N140 15N160 1400 1400 1600 1600 ±20 ±30 15 9 18 ICM = 18 150 -55 .
.
.
+150 150 -55 .
.
.
+150 V V V V A A A A W °C °C °C °C
Features • International standard package JEDEC TO-247 AD • High Volta...