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IXBH15N140

IXYS Corporation
Part Number IXBH15N140
Manufacturer IXYS Corporation
Description (IXBH15N140 / IXBH15N160) High Voltage BIMOSFET Monolithic Bipolar MOS Transistor
Published Mar 3, 2009
Detailed Description www.DataSheet4U.com High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH 15N140 IXBH 15N160 N-Channel, Enhan...
Datasheet PDF File IXBH15N140 PDF File

IXBH15N140
IXBH15N140

Overview
www.
DataSheet4U.
com High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH 15N140 IXBH 15N160 N-Channel, Enhancement Mode C G VCES IC25 VCE(sat) tfi TO-247 AD = = = = 1400/1600 V 15 A 5.
8 V typ.
40 ns G C E E G = Gate, E = Emitter, C = Collector, TAB = Collector C (TAB) Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg TL Md Weight Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C, TC = 90°C TC = 25°C, 1 ms Maximum Ratings 15N140 15N160 1400 1400 1600 1600 ±20 ±30 15 9 18 ICM = 18 150 -55 .
.
.
+150 150 -55 .
.
.
+150 V V V V A A A A W °C °C °C °C Features • International standard package JEDEC TO-247 AD • High Voltage BIMOSFETTM - replaces high voltage Darlingtons and series connected MOSFETs - lower effective RDS(on) • Monolithic construction - high blocking voltage capability - very fast turn-off characteristics • MOS Gate turn-on - drive simplicity • Reverse conducting capability VGE = 15 V, TVJ = 125°C, RG = 47 W VCE = 0.
8•VCES Clamped inductive load, L = 100 mH TC = 25°C Applications • • • • Flyback converters DC choppers Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies • CRT deflection • Lamp ballasts 1.
6 mm (0.
063 in) from case for 10 s Mounting torque 300 1.
15/10 Nm/lb.
in.
6 g Symbol Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min.
typ.
max.
15N140 15N160 TJ = 25°C TJ = 125°C 1400 1600 4 0.
1 ± 500 5.
8 7.
7 7.
0 8 100 V V V mA mA nA V V Advantages • Easy to mount with 1 screw (isolated mounting screw hole) • Space savings • High power density BVCES VGE(th) ICES IGES VCE(sat) IC IC = 1 mA, VGE = 0 V = 1 mA, VCE = VGE VCE = 0.
8 • VCES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V TJ = 125°C © 2000 IXYS All rights reserved 1-4 918 IXBH 15N140 IXBH 15N160 www.
DataSheet4U.
com Symbol Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min.
typ.
max.
1200 pF pF pF nC ns ns ns ns 0.
...


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