2SC3352

2SC3352 : · ·Collector-Emiiter Sustaining Voltage- : VCEO(SUS)= 500V(Min.) ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max.)@ IC= 1A ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 1.5 A ICM Collector Current-Peak 3 A IB Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 0.5 .

2SC3352 : 2SC3352, 2SC3352A して、として、いますを s q q q q s s *VCEO(sus) (TC=25˚C) 2SC3352A 2SC3352A TC=25°C Ta=25°C VCBO VCEO VEBO ICP IC IB PC Tj Tstg (TC=25˚C) 800 900 500 8 3 1.5 0.5 25 2 150 –55 ~ +150 V V V A A A W ˚C ˚C 2SC3352A 2SC3352A 2SC3352A 2SC3352A 2SC3352A 2SC3352A ICBO IEBO VCEO(sus) hFE1 hFE2 VCE(sat) VBE(sat) fT ton tstg tf VCB = 800V, IE = 0 VCB = 900V, IE = 0 VEB = 5V, IC = 0 IC = 0.2A, L = 25mH VCE = 5V, IC = 0.1A VCE = 5V, IC = 1A IC = 1A, IB = 0.2A IC = 1A, IB = 0.2A VCE = 10V, IC = 0.2A, f = 1MHz IC = 1A, IB1 = 0.2A, IB2 = –0.2A, VCC = 200V 50/60Hz 120Ω 6V X L 25mH Y 1Ω 15V G 14.0±0.5 Solder Dip 16.7±0.3 7.5±0.2 4.0 0.7±0.1 10.0±0.2 5.5±0.2 Unit: mm 4.2±0.2 2.7±0.2 .

2SC3352A : 2SC3352, 2SC3352A して、として、いますを s q q q q s s *VCEO(sus) (TC=25˚C) 2SC3352A 2SC3352A TC=25°C Ta=25°C VCBO VCEO VEBO ICP IC IB PC Tj Tstg (TC=25˚C) 800 900 500 8 3 1.5 0.5 25 2 150 –55 ~ +150 V V V A A A W ˚C ˚C 2SC3352A 2SC3352A 2SC3352A 2SC3352A 2SC3352A 2SC3352A ICBO IEBO VCEO(sus) hFE1 hFE2 VCE(sat) VBE(sat) fT ton tstg tf VCB = 800V, IE = 0 VCB = 900V, IE = 0 VEB = 5V, IC = 0 IC = 0.2A, L = 25mH VCE = 5V, IC = 0.1A VCE = 5V, IC = 1A IC = 1A, IB = 0.2A IC = 1A, IB = 0.2A VCE = 10V, IC = 0.2A, f = 1MHz IC = 1A, IB1 = 0.2A, IB2 = –0.2A, VCC = 200V 50/60Hz 120Ω 6V X L 25mH Y 1Ω 15V G 14.0±0.5 Solder Dip 16.7±0.3 7.5±0.2 4.0 0.7±0.1 10.0±0.2 5.5±0.2 Unit: mm 4.2±0.2 2.7±0.2 .

2SC3353 : · ·Collector-Emiiter Sustaining Voltage- : VCEO(SUS)= 500V(Min.) ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max.)@ IC= 3A ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IB Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 3 A .

2SC3353 : .

2SC3353A : · ·Collector-Emiiter Sustaining Voltage- : VCEO(SUS)= 500V(Min.) ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max.)@ IC= 3A ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IB Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 3 A .

2SC3353A : .

2SC3354 : Transistors 2SC3354 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing Unit: mm 4.0±0.2 2.0±0.2 15.6±0.5 (0.8) (0.8) 3.0±0.2 7.6 ■ Features • Optimum for high-density mounting • Allowing supply with the radial taping 0.75 max. • High transition frequency fT / ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit e pe) Collector-base voltage (Emitter open) VCBO 30 V c e. d ty Collector-emitter voltage (Base open) VCEO 20 V n d stag tinue Emitter-base voltage (Collector open) VEBO 3 V a e cle con Collector current IC 50 mA lifecy , dis Collector power dissipation PC 300 mW n u duct typed Junction temperature Tj 150.

2SC3355 : The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has lange dynamic range and good current characteristic. PACKAGE DIMENSIONS in millimeters (inches) 5.2 MAX. (0.204 MAX.) FEATURES • Low Noise and High Gain NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz NF = 1.1 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz • High Power Gain MAG = 11 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz 0.5 (0.02) 1.77 MAX. (0.069 MAX.) 5.5 MAX. (0.216 MAX.) ABSOLUTE MAXIMUM RATINGS (TA = 25
C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipati.

2SC3355 : UNISONIC TECHNOLOGIES CO., LTD 2SC3355 NPN SILICON EPITAXIAL TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER  FEATURES * Low Noise and High Gain * High Power Gain 1 TO-92  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SC3355L-T92-B 2SC3355G-T92-B 2SC3355L-T92-K 2SC3355G-T92-K Note: Pin Assignment: B: Base E: Emitter C: Collector Package TO-92 TO-92 Pin Assignment 123 BEC BEC 2SC3355L-T92-B (1)Packing Type (1) B: Tape Box, K: Bulk (2)Package Type (3)Lead Free (2) T92: TO-92 (3) L: Lead Free, G: Halogen Free Packing Tape Box Bulk  MARKING INFORMATION PACKAGE TO-92 MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., LTD 1 of 3 QW-R20.

2SC3355 : ·Low Noise NF = 1.5dB TYP @ VCE=10V，IC=7mA， f=1GHz •High Power Gain ︱S21e︱2 = 9.5dB TYP @ VCE=10V，IC=20mA，f=1GHz ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous Pc Collector Power Dissipation @TC=25℃ Tj Junction Temperature 100 mA 500 mW 150 ℃ Tstg Storage Temperature Range -65~150 ℃ 2SC3355 · isc website：www.i.

2SC3355 : TO-92 NPN 。Silicon NPN transistor in a TO-92 Plastic Package. / Features 。 Low noise and high power gain. / Applications 、。 low noise amplifier at VHF, UHF and CATV band applications. / Equivalent Circuit / Pinning 1 23 PIN1：Base PIN 2：Collector PIN 3：Emitter / hFE Classifications & Marking 。See Marking Instructions. http://www.fsbrec.com 1/6 2SC3355 Rev.E Mar.-2016 DATA SHEET / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 20 12 3.0 100.

2SC3356 : The 2SC3356 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. 0.4 −0.05 +0.1 PACKAGE DIMENSIONS (Units: mm) 2.8±0.2 1.5 0.65 −0.15 +0.1 FEATURES • Low Noise and High Gain 0.95 0.95 2.9±0.2 NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz • High Power Gain MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz 2 ABSOLUTE MAXIMUM RATINGS (TA = 25
C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PT Tj Tstg 65 20 12 3.0 100 200 150 to .

2SC3356 : The UTC 2SC3356 is designed for such applications as: DC/DC converters, supply line switching, battery charger, LCD backlighting, peripheral drivers, Driver in low supply voltage applications (e.g. lamps and LEDs) and inductive load driver (e.g. relays, buzzers and motors). 12 SOT-23-3 (JEDEC TO-236) 12 SOT-23 (EIAJ SC-59)  FEATURES * Low Noise and High Gain * High Power Gain 1 SOT-89  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 2SC3356L-x-AE2-R 2SC3356G-x-AE2-R SOT-23-3 2SC3356L-x-AE3-R 2SC3356G-x-AE3-R SOT-23 2SC3356L-x-AB3-R 2SC3356G-x-AB3-R SOT-89 Note: Pin Assignment: B: Base E: Emitter C: Collector Pin Description 123 BEC BEC BCE Packing T.

2SC3356 : SMD Type NPN Silicon Epitaxial Transistor 2SC3356 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm Features +0.1 2.4-0.1 NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz High power gain. MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz +0.1 1.3-0.1 Low noise and high gain. 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Total power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC Ptot Tj Tstg Rating 20 12 3.0 100 200 1.

2SC3356 : ·Low Noise and High Gain NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz ·High Power Gain MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low noise amplifier at VHF, UHF and CATV band. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 3.0 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 0.1 A 0.2 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website：www.iscsemi.cn .