Part Number
|
IS41LV85120 |
Manufacturer
|
Integrated Silicon Solution |
Description
|
512K x 8 (4-MBIT) DYNAMIC RAM |
Published
|
Apr 24, 2009 |
Detailed Description
|
IS41C85120 IS41LV85120
512K x 8 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
www.datasheet4u.com
ISSI
DESCRIPTION
®
PRELIM...
|
Datasheet
|
IS41LV85120
|
Overview
IS41C85120 IS41LV85120
512K x 8 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
www.
datasheet4u.
com
ISSI
DESCRIPTION
®
PRELIMINARY INFORMATION SEPTEMBER 2001
FEATURES
• TTL compatible inputs and outputs • Refresh Interval: 1024 cycles/16 ms • Refresh Mode : RAS-Only, CAS-before-RAS (CBR), and Hidden • JEDEC standard pinout • Single power supply 5V ± 10% (IS41C85120) 3.
3V ± 10% (IS41LV85120) • Industrail Temperature Range -40oC to 85oC
The ISSI IS41C85120 and IS41LV85120 are 524,288 x 8-bit high-performance CMOS Dynamic Random Access Memory.
Both products offer accelerated cycle access EDO Page Mode.
EDO Page Mode allows 512 random accesses within a single row with access cycle time as short as...
Similar Datasheet