DatasheetsPDF.com

IS41LV85120

Part Number	IS41LV85120
Manufacturer	Integrated Silicon Solution
Description	512K x 8 (4-MBIT) DYNAMIC RAM
Published	Apr 24, 2009
Detailed Description	IS41C85120 IS41LV85120 512K x 8 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE www.datasheet4u.com ISSI DESCRIPTION ® PRELIM...
Datasheet	IS41LV85120 PDF File

Overview

IS41C85120 IS41LV85120 512K x 8 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE www.
datasheet4u.
com ISSI DESCRIPTION ® PRELIMINARY INFORMATION SEPTEMBER 2001 FEATURES • TTL compatible inputs and outputs • Refresh Interval: 1024 cycles/16 ms • Refresh Mode : RAS-Only, CAS-before-RAS (CBR), and Hidden • JEDEC standard pinout • Single power supply 5V ± 10% (IS41C85120) 3.
3V ± 10% (IS41LV85120) • Industrail Temperature Range -40oC to 85oC The ISSI IS41C85120 and IS41LV85120 are 524,288 x 8-bit high-performance CMOS Dynamic Random Access Memory.
Both products offer accelerated cycle access EDO Page Mode.
EDO Page Mode allows 512 random accesses within a single row with access cycle time as short as...

Similar Datasheet

IS41LV8512 512K x 8 (4-MBIT) DYNAMIC RAM - Integrated Circuit Solution
IS41LV85120 512K x 8 (4-MBIT) DYNAMIC RAM - Integrated Silicon Solution
IS41LV85120A 512K x 8 (4-MBIT) DYNAMIC RAM - Integrated Silicon Solution
IS41LV85125 512K x 8 (4-MBIT) DYNAMIC RAM - Integrated Silicon Solution
IS41LV85125A 512K x 8 (4-MBIT) DYNAMIC RAM - Integrated Silicon Solution

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)