LET20030C
RF POWER
TRANSISTORS Ldmos Enhanced Technology
TARGET DATA
Designed for GSM / EDGE / IS-97 applications
• IS-97 CDMA PERFORMANCES POUT = 4.
5 W EFF.
= 17 % • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 30 W with 11 dB gain @ 2000 MHz • ESD PROTECTION
ORDER CODE LET20030C M243 epoxy sealed BRANDING LET20030C
DESCRIPTION The LET20030C is a common source N-Channel enhancement-mode lateral Field-Effect RF power
transistor designed for broadband commercial and industrial applications at frequencies up to 2.
0 GHz.
The LET20030C is designed for high gain and broadband performance operating in common source mode at 26 V.
It is ideal for base station applications re...