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LET20030C

Part Number	LET20030C
Manufacturer	STMicroelectronics
Description	RF POWER TRANSISTORS Ldmos Enhanced Technology
Published	Mar 22, 2005
Detailed Description	LET20030C RF POWER TRANSISTORS Ldmos Enhanced Technology TARGET DATA Designed for GSM / EDGE / IS-97 applications • IS...
Datasheet	LET20030C PDF File

Overview

LET20030C RF POWER TRANSISTORS Ldmos Enhanced Technology TARGET DATA Designed for GSM / EDGE / IS-97 applications • IS-97 CDMA PERFORMANCES POUT = 4.
5 W EFF.
= 17 % • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 30 W with 11 dB gain @ 2000 MHz • ESD PROTECTION ORDER CODE LET20030C M243 epoxy sealed BRANDING LET20030C DESCRIPTION The LET20030C is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 2.
0 GHz.
The LET20030C is designed for high gain and broadband performance operating in common source mode at 26 V.
It is ideal for base station applications re...

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