LET20030S
RF POWER
TRANSISTORS Ldmos Enhanced Technology in Plastic Package
TARGET DATA
Designed for GSM / EDGE / IS-97 applications • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 30 W with 11 dB gain @ 2000 MHz • ESD PROTECTION • IS-97 CDMA PERFORMANCES POUT = 4.
5 W EFF = 17 %
PowerSO-10RF (straight lead) ORDER CODE LET20030S BRANDING LET20030S
DESCRIPTION The LET20030S is a common source N-Channel, enhancement-mode lateral Field-Effect RF power
transistor.
It is designed for high gain, broad band commercial and industrial applications.
It operates at 26 V in common source mode at frequencies up to 2 GHz.
LET20030S boasts the excellent gain, linearity and reliability...