LET9060C
RF POWER
TRANSISTORS Ldmos Enhanced Technology
PRELIMINARY DATA
N-CHANNEL MOSFETs
ENHANCEMENT-MODE
LATERAL
• EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 60 W WITH 17.
3 dB gain @ 945 MHz • BeO FREE PACKAGE • HIGH GAIN • ESD PROTECTION
ORDER CODE LET9060C M243 epoxy sealed BRANDING LET9060C
DESCRIPTION The LET9060C is an N-Channel enhancement-mode lateral Field-Effect RF power
transistor, designed for high gain broadband, commercial and industrial applications.
It operates at 28 V in common source mode at frequencies up to 1.
0 GHz.
LET9060C boasts the excellent gain, linearity and reliability of the ST latest LDMOS technology.
Its superior performances make...