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LET9060C

Part Number	LET9060C
Manufacturer	STMicroelectronics
Description	RF POWER TRANSISTORS Ldmos Enhanced Technology
Published	Mar 22, 2005
Detailed Description	LET9060C RF POWER TRANSISTORS Ldmos Enhanced Technology PRELIMINARY DATA N-CHANNEL MOSFETs ENHANCEMENT-MODE LATERAL ...
Datasheet	LET9060C PDF File

Overview

LET9060C RF POWER TRANSISTORS Ldmos Enhanced Technology PRELIMINARY DATA N-CHANNEL MOSFETs ENHANCEMENT-MODE LATERAL • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 60 W WITH 17.
3 dB gain @ 945 MHz • BeO FREE PACKAGE • HIGH GAIN • ESD PROTECTION ORDER CODE LET9060C M243 epoxy sealed BRANDING LET9060C DESCRIPTION The LET9060C is an N-Channel enhancement-mode lateral Field-Effect RF power transistor, designed for high gain broadband, commercial and industrial applications.
It operates at 28 V in common source mode at frequencies up to 1.
0 GHz.
LET9060C boasts the excellent gain, linearity and reliability of the ST latest LDMOS technology.
Its superior performances make...

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