LET9060S
RF POWER
TRANSISTORS Ldmos Enhanced Technology in Plastic Package
PRELIMINARY DATA
N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 60 W with 17 dB gain @ 945 MHz / 26V • NEW RF PLASTIC PACKAGE • HIGH GAIN • ESD PROTECTION • AVAILABLE IN TAPE & REEL with TR SUFFIX DESCRIPTION The LET9060S is a common source N-Channel, enhancement-mode lateral Field-Effect RF power
transistor.
It is designed for high gain, broad band commercial and industrial applications.
It operates at 26 V in common source mode at frequencies up to 1 GHz.
LET9060S boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mou...