Advanced Power MOSFET
Advanced Power MOSFET FEATURES www.datasheet4u.com n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n 175 C Operating Temperature n Lower Leakage Current : 10 µA (Max.) @ VDS = -100V n Low RDS(ON) : 0.444 Ω (Typ.) 1 SFW/I9520 BVDSS = -100 V RDS(on) = 0.6 Ω ID = -6.0 ...
Fairchild Semiconductor