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SFI9520

Fairchild Semiconductor
Part Number SFI9520
Manufacturer Fairchild Semiconductor
Description Advanced Power MOSFET
Published Jun 7, 2009
Detailed Description Advanced Power MOSFET FEATURES www.datasheet4u.com n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower ...
Datasheet PDF File SFI9520 PDF File

SFI9520
SFI9520


Overview
Advanced Power MOSFET FEATURES www.
datasheet4u.
com n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n 175 C Operating Temperature n Lower Leakage Current : 10 µA (Max.
) @ VDS = -100V n Low RDS(ON) : 0.
444 Ω (Typ.
) 1 SFW/I9520 BVDSS = -100 V RDS(on) = 0.
6 Ω ID = -6.
0 A D2-PAK 2 o I2-PAK 1 3 2 3 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt o Total Power Dissipation (TA=25 C) * o o Value -100 -6.
0 -4.
0 1 O Units V A A V mJ A mJ V/ns W W W/ C o -24 ±30 144 -6.
0 4.
9 -6.
5 3.
8 49 0.
33 - 55 to +175 O 1 O 1 O 3 O 2 Total Power Dissipation (TC=25 C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp.
for Soldering Purposes, 1/8” from case for 5-seconds o TJ , TSTG TL o C 300 Thermal Resistance Symbol RθJC RθJA RθJA Characteristic Junction-to-Case Junction-to-Ambient * Junction-to-Ambient Typ.
---Max.
3.
06 40 62.
5 o Units C/W * When mounted on the minimum pad size recommended (PCB Mount).
Rev.
C SFW/I9520 Electrical Characteristics (TC=25oC unless otherwise specified) Symbol www.
datasheet4u.
com P-CHANNEL POWER MOSFET Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp.
Coeff.
Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain(“Miller”) Charge Min.
Typ.
Max.
Units -100 --2.
0 ------------------0.
1 ------3.
6 425 9...


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