DISCRETE SEMICONDUCTORS
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DATA SHEET
M3D381
BLL1214-35 L-band radar LDMOS driver
transistor
Product specification 2002 Sep 27
Philips Semiconductors
Product specification
L-band radar LDMOS driver
transistor
FEATURES www.
datasheet4u.
com • High power gain • Easy power control • Excellent ruggedness • Source on mounting base eliminates DC isolators, reducing common mode inductance.
APPLICATIONS • L-band radar applications in the 1200 to 1400 MHz frequency range.
DESCRIPTION
2 1
BLL1214-35
PINNING - SOT467C PIN 1 2 3 drain gate source, connected to flange DESCRIPTION
3
Silicon N-channel enhancement mode lateral D-MOS
transistor encapsulated in a 2-lead flange package (...