DatasheetsPDF.com

BLL1214-250

NXP
Part Number BLL1214-250
Manufacturer NXP
Description L-band radar LDMOS transistor
Published Mar 23, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLL1214-250 L-band radar LDMOS transistor Product specificati...
Datasheet PDF File BLL1214-250 PDF File

BLL1214-250
BLL1214-250

Overview
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLL1214-250 L-band radar LDMOS transistor Product specification Supersedes data of 2002 Aug 06 2003 Aug 29 Philips Semiconductors Product specification L-band radar LDMOS transistor FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on mounting base eliminates DC isolators, reducing common mode inductance.
APPLICATIONS • L-band radar applications in the 1200 to 1400 MHz frequency range.
DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT502A) with a ceramic cap.
The common source is connected to the flange.
Top view handbook, halfpage BLL1214-250 PINNING - SOT502A PIN 1 2 3 drain gate source, connected to flange DESCRIPTION 1 2 3 MBK394 Fig.
1 Simplified outline.
QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source test circuit.
MODE OF OPERATION Pulsed class-AB; tp = 1 ms; δ = 10% f (MHz) 1200 to 1400 VDS (V) 36 ...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)