PD20010-E
RF power
transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs
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Features
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Excellent thermal stability Common source configuration POUT = 10 W with 11 dB gain @ 2 GHz / 13.
6 V Plastic package ESD protection In compliance with the 2002/95/EC european directive
PowerSO-10RF (formed lead)
Description
The PD20010-E is a common source N-Channel, enhancement-mode lateral Field-Effect RF power
transistor.
It is designed for high gain, broadband commercial and industrial applications.
It operates at 13.
6 V in common source mode at frequencies of up to 1 GHz.
PD20010-E boasts the excellent gain, linearity and reliability of ST’s latest ...