DatasheetsPDF.com

STAP85050

ST Microelectronics
Part Number STAP85050
Manufacturer ST Microelectronics
Description RF power transistor
Published Jun 10, 2009
Detailed Description PD20010-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs www.datasheet4u.com Fea...
Datasheet PDF File STAP85050 PDF File

STAP85050
STAP85050

Overview
PD20010-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs www.
datasheet4u.
com Features ■ ■ ■ ■ ■ ■ Excellent thermal stability Common source configuration POUT = 10 W with 11 dB gain @ 2 GHz / 13.
6 V Plastic package ESD protection In compliance with the 2002/95/EC european directive PowerSO-10RF (formed lead) Description The PD20010-E is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor.
It is designed for high gain, broadband commercial and industrial applications.
It operates at 13.
6 V in common source mode at frequencies of up to 1 GHz.
PD20010-E boasts the excellent gain, linearity and reliability of ST’s latest ...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)