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STAP57060

RF power transistor

Description

STAP57060 www.datasheet4u.com RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features ■ ■ ■ ■ Excellent thermal stability Common source configuration POUT = 60 W with 14.3 dB gain @ 945 MHz / 28 V ST advanced PowerSO-10 RF-STAP-package Description The STAP57060 is a common source N-Channel, enhancement-mode lateral ...


ST Microelectronics

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