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STAP57060

ST Microelectronics
Part Number STAP57060
Manufacturer ST Microelectronics
Description RF power transistor
Published Jun 10, 2009
Detailed Description STAP57060 www.datasheet4u.com RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Fe...
Datasheet PDF File STAP57060 PDF File

STAP57060
STAP57060



Overview
STAP57060 www.
datasheet4u.
com RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features ■ ■ ■ ■ Excellent thermal stability Common source configuration POUT = 60 W with 14.
3 dB gain @ 945 MHz / 28 V ST advanced PowerSO-10 RF-STAP-package Description The STAP57060 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power MOSFET.
It is designed for high gain, broad band commercial and industrial applications.
It operates at 28 V in common source mode at frequencies of up to 1 GHz.
STAP57060 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in STAP1 plastic RF power package.
STAP package has been specially optmized for RF needs and offers excellent performances and ease of assembly.
Mounting recommendations are available in www.
st.
com/rf/ (look for application note AN1294) GATE SOURCE Figure 1.
Pin connection DRAIN Table 1.
Device summary Order codes STAP57060 Package STAP1 Packaging Tube May 2009 Doc ID 15708 Rev 1 1/16 www.
st.
com 16 Contents STAP57060 1 www.
datasheet4u.
com Contents Contents .
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2 Electrical data .
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3 2.
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3 Thermal data .
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3 1 2 3 Electrical characteristics .
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4 3.
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4 Dynamic .
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4 4 5 6 7 8 9 Impedances .
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