Part Number
|
TC55NEM216AFTN70 |
Manufacturer
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Toshiba Semiconductor |
Description
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(TC55NEM216AFTN55 / TC55NEM216AFTN77) MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
Published
|
Jun 30, 2009 |
Detailed Description
|
TC55NEM216AFTN55,70
www.DataSheet4U.com
TENTATIVE
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
262,144-WO...
|
Datasheet
|
TC55NEM216AFTN70
|
Overview
TC55NEM216AFTN55,70
www.
DataSheet4U.
com
TENTATIVE
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
262,144-WORD BY 16-BIT FULL CMOS STATIC RAM DESCRIPTION
The TC55NEM216AFTN is a 4,194,304-bit static random access memory (SRAM) organized as 262,144 words by 16 bits.
Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5V ± 10% power supply.
Advanced circuit technology provides both high speed and low power at an operating current of 3 mA/MHz (typ) and a minimum cycle time of 55 ns.
It is automatically placed in low-power mode at 1 µA standby current (typ) when chip enable ( CE ) is asserted high.
There are two control inputs.
CE is us...
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