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TC55NEM216AFTN70

Toshiba Semiconductor
Part Number TC55NEM216AFTN70
Manufacturer Toshiba Semiconductor
Description (TC55NEM216AFTN55 / TC55NEM216AFTN77) MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
Published Jun 30, 2009
Detailed Description TC55NEM216AFTN55,70 www.DataSheet4U.com TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WO...
Datasheet PDF File TC55NEM216AFTN70 PDF File

TC55NEM216AFTN70
TC55NEM216AFTN70

Overview
TC55NEM216AFTN55,70 www.
DataSheet4U.
com TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55NEM216AFTN is a 4,194,304-bit static random access memory (SRAM) organized as 262,144 words by 16 bits.
Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5V ± 10% power supply.
Advanced circuit technology provides both high speed and low power at an operating current of 3 mA/MHz (typ) and a minimum cycle time of 55 ns.
It is automatically placed in low-power mode at 1 µA standby current (typ) when chip enable ( CE ) is asserted high.
There are two control inputs.
CE is us...


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