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Freescale Semiconductor Technical Data
Document Number: MRF284 Rev.
17, 5/2006
RF Power Field Effect
Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz.
Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications.
To be used in Class A and Class AB for PCN - PCS/cellular radio and wireless local loop.
• Specified Two - Tone Performance @ 2000 MHz, 26 Volts Output Power = 30 Watts PEP Power Gain = 9 dB Efficiency = 30% Intermodulation Distortion = - 29 dBc • Typical Single - Tone Performance at 2000 MHz, 26 Volts Output Power = 30 Watts CW Power Gain = 9.
5 dB Effi...