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MRF284LSR1

Part Number	MRF284LSR1
Manufacturer	Freescale Semiconductor
Description	RF Power Field Effect Transistors
Published	Jul 2, 2009
Detailed Description	www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF284 Rev. 17, 5/2006 RF Power Field Eff...
Datasheet	MRF284LSR1 PDF File

Overview

www.
DataSheet4U.
com Freescale Semiconductor Technical Data Document Number: MRF284 Rev.
17, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz.
Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications.
To be used in Class A and Class AB for PCN - PCS/cellular radio and wireless local loop.
• Specified Two - Tone Performance @ 2000 MHz, 26 Volts Output Power = 30 Watts PEP Power Gain = 9 dB Efficiency = 30% Intermodulation Distortion = - 29 dBc • Typical Single - Tone Performance at 2000 MHz, 26 Volts Output Power = 30 Watts CW Power Gain = 9.
5 dB Efficiency = 45% • Capable of Handling 10:1 VSWR, @ 26 Vdc, 2000 MHz, 30 Watts CW Output Power Features • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • Low Gold Plating Thickness on Leads.
L Suffix Indicates 40μ″ Nominal.
• RoHS Compliant • In Tape and Reel.
R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
Table 1.
Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol VDSS VGS PD Tstg TC TJ MRF284LR1 MRF284LSR1 2000 MHz, 30 W, 26 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFETs CASE 360B - 05, STYLE 1 NI - 360 MRF284LR1 CASE 360C - 05, STYLE 1 NI - 360S MRF284LSR1 Value - 0.
5, +65 ± 20 87.
5 0.
5 - 65 to +150 150 200 Unit Vdc Vdc W W/°C °C °C °C Table 2.
Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol RθJC Value 2.
0 Unit °C/W Table 3.
Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Off Characteristics Drain - Source Breakdown Voltage (VGS = 0, ID = 10 μAdc) Zero Gate Voltage Drain Current (VDS = 20 Vdc, VGS = 0) Gate - Source Leakage Current (VGS = 20 Vdc, VDS = 0) V(BR)DSS IDSS IGSS 65 — — — — — — 1.
0 ...

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