SSM3J118TU
TOSHIBA Field-Effect
Transistor Silicon P-Channel MOS Type
SSM3J118TU
High-Speed Switching Applications
• 4 V drive
• Low ON-resistance:
Ron = 480 mΩ (max) (@VGS = −4 V) Ron = 240 mΩ (max) (@VGS = −10 V)
Absolute Maximum Ratings (Ta = 25°C)
2.
1±0.
1 1.
7±0.
1
Unit: mm
0.
3-+00.
.
015
2.
0±0.
1 0.
65±0.
05
0.
166±0.
05
Characteristic
Symbol
Rating
Unit
Drain–source voltage Gate–source voltage
Drain current
DC Pulse
Drain power dissipation
Channel temperature Storage temperature range
VDS
−30
V
VGSS
± 20
V
ID
−1.
4 A
IDP
−2.
8
PD (Note 1)
800
mW
PD (Note 2)
500
Tch
150
°C
Tstg
−55 to 150
°C
Note:
Note 1: Note 2:
Using continuously under heavy loads (e.
g.
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