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SSM3J118TU

Part Number	SSM3J118TU
Manufacturer	Toshiba Semiconductor
Description	Silicon P-Channel MOSFET
Published	Jul 7, 2009
Detailed Description	SSM3J118TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J118TU High-Speed Switching Applications •...
Datasheet	SSM3J118TU PDF File

Overview

SSM3J118TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J118TU High-Speed Switching Applications • 4 V drive • Low ON-resistance: Ron = 480 mΩ (max) (@VGS = −4 V) Ron = 240 mΩ (max) (@VGS = −10 V) Absolute Maximum Ratings (Ta = 25°C) 2.
1±0.
1 1.
7±0.
1 Unit: mm 0.
3-+00.
.
015 2.
0±0.
1 0.
65±0.
05 0.
166±0.
05 Characteristic Symbol Rating Unit Drain–source voltage Gate–source voltage Drain current DC Pulse Drain power dissipation Channel temperature Storage temperature range VDS −30 V VGSS ± 20 V ID −1.
4 A IDP −2.
8 PD (Note 1) 800 mW PD (Note 2) 500 Tch 150 °C Tstg −55 to 150 °C Note: Note 1: Note 2: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
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SSM3J118TU Silicon P-Channel MOSFET - Toshiba Semiconductor

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