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STAP85025
RF power
transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs
Features
■ ■ ■ ■ ■ ■
Excellent thermal stability Common source configuration POUT = 25 W with 15.
7 dB gain @ 870 MHz / 13.
6 V Plastic package ESD protection In compliance with the 2002/95/EC European directive
Description
STAP1
The STAP85025 is a common source N-channel, enhancement-mode lateral field-effect RF power
transistor.
It is designed for high gain, broadband commercial and industrial applications.
It operates at 13.
6 V in common source mode at frequencies of up to 1 GHz.
STAP85025 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology...