Part Number
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MRF18085ALSR3 |
Manufacturer
|
Motorola |
Description
|
RF Power Field Effect Transistor |
Published
|
Jul 16, 2009 |
Detailed Description
|
MOTOROLA
com
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF18085A/D
Designed for GSM and GSM...
|
Datasheet
|
MRF18085ALSR3
|
Overview
MOTOROLA
com
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF18085A/D
Designed for GSM and GSM EDGE base station applications with frequencies from 1.
8 to 2.
0 GHz.
Suitable for TDMA, CDMA and multicarrier amplifier applications.
To be used in Class AB for PCN–PCS/cellular radio and WLL applications.
Specified for GSM–GSM EDGE 1805 – 1880 MHz.
• GSM and GSM EDGE Performance, Full Frequency Band (1805–1880 MHz) Power Gain – 15 dB (Typ) @ 85 Watts CW Efficiency – 52% (Typ) @ 85 Watts CW • Internally Matched, Controlled Q, for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness ...
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