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MRF18085ALSR3

Freescale Semiconductor
Part Number MRF18085ALSR3
Manufacturer Freescale Semiconductor
Description RF Power Field Effect Transistors
Published Apr 25, 2015
Detailed Description Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs ...
Datasheet PDF File MRF18085ALSR3 PDF File

MRF18085ALSR3
MRF18085ALSR3

Overview
Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz.
Suitable for TDMA, CDMA and multicarrier amplifier applications.
To be used in Class AB for PCN - PCS/ cellular radio and WLL applications.
Specified for GSM - GSM EDGE 1805 - 1880 MHz.
• GSM and GSM EDGE Performance, Full Frequency Band (1805 - 1880 MHz) Power Gain - 15 dB (Typ) @ 85 Watts CW Efficiency - 52% (Typ) @ 85 Watts CW • Internally Matched, Controlled Q, for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum G...


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