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BLF6G10LS-135R
Power LDMOS
transistor
Rev.
01 — 17 November 2008 Product data sheet
1.
Product profile
1.
1 General description
135 W LDMOS power
transistor for base station applications at frequencies from 800 MHz to 1000 MHz.
Table 1.
Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit.
Mode of operation 2-carrier W-CDMA
[1]
f (MHz) 869 to 894
VDS (V) 28
PL(AV) (W) 26.
5
Gp (dB) 21.
0
ηD (%) 28.
0
ACPR (dBc) −39[1]
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.
5 dB at 0.
01 % probability on CCDF per carrier; carrier spacing 5 MHz.
CAUTION This device is sensitive to ElectroStatic Discharge (ESD).
Therefore care shoul...