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BLF6G10LS-135R

NXP Semiconductors
Part Number BLF6G10LS-135R
Manufacturer NXP Semiconductors
Description Power LDMOS transistor
Published Jul 29, 2009
Detailed Description www.DataSheet4U.com BLF6G10LS-135R Power LDMOS transistor Rev. 01 — 17 November 2008 Product data sheet 1. Product pro...
Datasheet PDF File BLF6G10LS-135R PDF File

BLF6G10LS-135R
BLF6G10LS-135R

Overview
www.
DataSheet4U.
com BLF6G10LS-135R Power LDMOS transistor Rev.
01 — 17 November 2008 Product data sheet 1.
Product profile 1.
1 General description 135 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz.
Table 1.
Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit.
Mode of operation 2-carrier W-CDMA [1] f (MHz) 869 to 894 VDS (V) 28 PL(AV) (W) 26.
5 Gp (dB) 21.
0 ηD (%) 28.
0 ACPR (dBc) −39[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.
5 dB at 0.
01 % probability on CCDF per carrier; carrier spacing 5 MHz.
CAUTION This device is sensitive to ElectroStatic Discharge (ESD).
Therefore care should be taken during transport and handling.
1.
2 Features I Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a supply voltage of 28 V and an IDq of 950 mA: N Average output power = 26.
5 W N Power gain = 21.
0 dB N Efficiency = 28.
0 % N ACPR = −39 dBc I Easy power control I Int...


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