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BLF6G10LS-200R
Power LDMOS
transistor
Rev.
01 — 21 January 2008 Preliminary data sheet
1.
Product profile
1.
1 General description
200 W LDMOS power
transistor for base station applications at frequencies from 800 MHz to 1000 MHz.
Table 1.
Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit.
Mode of operation 2-carrier W-CDMA
[1]
f (MHz) 869 to 894
VDS (V) 28
PL(AV) (W) 40
Gp (dB) 20
ηD (%) 27.
5
ACPR (dBc) −40[1]
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.
5 dB at 0.
01 % probability on CCDF per carrier; carrier spacing 5 MHz.
CAUTION This device is sensitive to ElectroStatic Discharge (ESD).
Therefore care should...